Product Overview
NJS 2N3766 Silicon NPN Power Transistor, 60 V 4 A, TO-66 Metal Case
Condition
Unused new old stock (NOS). Markings legible: NJS 2N3766. Sold each.
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Product Overview
A silicon NPN power transistor in the TO-66 metal case, marked NJS for New Jersey Semiconductor. It handles 60 V collector to emitter and 4 A of collector current, with 25 W of dissipation at a 25 C case, which puts it in mid-power linear and switching work.
Key Features
- Type: silicon NPN bipolar power transistor
- VCEO: 60 V
- VCBO: 80 V
- VEBO: 6.0 V
- Collector current (IC): 4.0 A
- Power dissipation: 25 W at 25 C case temperature
- Transition frequency (fT): 10 MHz
- Package: TO-66 metal can with diamond flange and two mounting holes
Applications
- Replacing a failed 2N3766 in older equipment drilled for the TO-66 footprint, with no redrilling or adapter plate
- Series pass element or driver in a linear supply or audio stage working inside 60 V and 4 A
Frequently Asked Questions
Will it fit a TO-3 heatsink or socket?
No. TO-66 is a smaller can with closer mounting-hole spacing than TO-3, so it takes TO-66 mounting hardware.
Which rating is the collector to emitter maximum, 60 V or 80 V?
60 V. That is VCEO, collector to emitter with the base open; the 80 V figure is VCBO, collector to base.
The TO-66 is the TO-3's smaller diamond, built for mid-power stages that never needed the big can. Chassis drilled for it stay drilled for it, so the tidy repair is the same can in the same holes.