Product Overview
Dallas DS1225AB-200 64K (8K x 8) Nonvolatile Static RAM Module - 200ns
Condition
Used. Pulled from working equipment. Top casing marked: DALLAS DS1225AB-200 NONVOLATILE SRAM 9341E 037262. Underside potted encapsulation reveals integrated DS1210 controller marked 9328C1 across 28 intact pin contacts. Evaluation: Visual inspection only. Function testing not performed. Verify suitability before use.
Same or next business day shipping from our Idaho warehouse. Reliable parts since 1999. Honest pricing, no nonsense.
We are here for our customers, with a no-hassle satisfaction guarantee.
Product Overview
The Dallas Semiconductor DS1225AB-200 is a fully integrated 65,536-bit (8K x 8) fully static nonvolatile RAM module housed in a standard 28-pin encapsulated DIP package. Built with an internal lithium energy source and an integrated DS1210 power-monitoring controller, it provides nonvolatile data retention without external backup circuitry. Operating with a 200 ns access time and a 5V supply (5% tolerance for the AB variant), it interfaces like a standard static RAM while securing critical data against power loss.
Key Features
- 64 Kbit memory density organized as 8,192 words by 8 bits
- 200 ns read and write cycle access time
- Integrated DS1210 power controller for automatic power-fail write protection
- Self-contained lithium backup power source within the encapsulated module
- Byte-wide parallel interface directly compatible with standard 8K x 8 SRAM pinouts
- 28-pin encapsulated DIP (EDIP) package with 0.600-inch row spacing
- Operating voltage range: 4.75V to 5.25V (5% Vcc tolerance)
Applications
- Replacing exhausted NVRAM modules in vintage arcade mainboards, synthesizers, and laboratory instruments during bench repairs
- Maintaining calibration tables and configuration data in legacy industrial controllers and CNC automation systems
- Providing nonvolatile parameter storage for custom retrocomputing builds and 8-bit microcomputer projects
Frequently Asked Questions
What does the potted underside with the DS1210 chip indicate?
The visible Dallas DS1210 integrated circuit in the underside encapsulation handles power monitoring, switching between external Vcc and the internal battery source to prevent data corruption during power transitions.
What is the pin configuration and footprint?
It uses a standard 28-pin through-hole DIP footprint on 0.600-inch row spacing, matching standard JEDEC 8K x 8 static RAM pinouts.
Why choose this individually photographed Dallas module?
Rather than gambling on bulk surplus lots with unknown origins, this specific module is visually inspected and clearly photographed so you can verify markings and package condition before ordering. Orders ship for an $8 flat rate, qualify for free shipping once over $28, and dispatch from our Idaho warehouse the same or next business day.
Solid nonvolatile storage from the era of self-contained silicon bricks - ready to drop in and keep your legacy memory maps intact.
