Product Overview
Dual P-Channel -30 V HEXFET Power MOSFET, 58 mOhm, SO-8
Condition
Condition: unused, new old stock (NOS). Markings legible: International Rectifier IOR logo, F7316. Sold each.
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Product Overview
Dual P-channel HEXFET power MOSFET from International Rectifier: two isolated -30 V transistors in one 8-lead SO package. Infineon, which acquired International Rectifier in 2015, publishes the IRF7316 today.
Key Features
- Two isolated P-channel enhancement-mode MOSFETs in one package
- Drain-source breakdown voltage -30 V
- On-resistance 58 mOhm maximum at VGS = -10 V
- Continuous drain current 4.9 A
- Gate-source voltage +/-20 V maximum
- Power dissipation 2 W
- SO-8 surface-mount package, 5 x 4 x 1.5 mm
Applications
- High-side switching of two separate loads from a 12 V or lower supply on a compact board
- Replacing an IRF7316 on a power-control board with the same part number
Frequently Asked Questions
Can the two MOSFETs switch separate loads?
Yes. The two P-channel devices are isolated from each other inside the package, so each one can switch its own load.
Can I use it on a 24 V rail?
The drain rating is -30 V, so a 24 V rail sits inside it. The gate is rated to +/-20 V, so the gate drive has to be held inside that limit rather than pulled the full 24 V below the source.
Is the IRF7316TRPBF the same part?
Electrically, yes. IRF7316TRPBF is the lead-free, tape-and-reel ordering code for the same dual P-channel IRF7316, with the same -30 V and 58 mOhm ratings.
Two isolated P-channel switches share one SO-8 body, a duplex with separate front doors. Give each tenant its own load and the high side of the board gets a lot less crowded.
